PART |
Description |
Maker |
BLL6H1214LS-250 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
BLL6H1214-500 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
BLS7G2933S-150 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
BLS6G3135S-120 BLS6G3135-120 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
BLS7G2730L-200P BLS7G2730L-200P-15 |
LDMOS S-band radar power transistor
|
NXP Semiconductors
|
MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
XAM1214-130 AM1214-130 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell Renesas Electronics Corporation
|
AM1214-250 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
|
STMicroelectronics ST Microelectronics SGS Thomson Microelectronics
|
AM83135-030 2771 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS From old datasheet system RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Red; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
2731-100M |
100 Watts, 36 Volts, 200us, 10% Radar 2700-3100 MHz S BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp. MICROSEMI POWER PRODUCTS GROUP
|